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Optical and Electrical Properties of Nanostructured Metallic Electrical Contacts

机译:纳米结构金属电气的光学和电学特性   往来

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摘要

We study the optical and electrical properties of silver films with a gradedthickness obtained through metallic evaporation in vacuum on a tilted substrateto evaluate their use as semitransparent electrical contacts. We measure theirellipsometric coefficients, optical transmissions and electrical conductivityfor different widths, and we employ an efficient recursive method to calculatetheir macroscopic dielectric function, their optical properties and theirmicroscopic electric fields. The topology of very thin films corresponds todisconnected islands, while very wide films are simply connected. Forintermediate widths the film becomes semicontinuous, multiply connected, andits microscopic electric field develops hotspots at optical resonances whichappear near the percolation threshold of the conducting phase, yielding largeohmic losses that increase the absorptance above that of a correspondinghomogeneous film. Optimizing the thickness of the film to maximize itstransmittance above the percolation threshold of the conductive phase weobtained a film with transmittance T = 0.41 and a sheet resistance$R_{\square}^{\mathrm{max}}\approx2.7\Omega$. We also analyze the observedemission frequency shift of porous silicon electroluminescent devices when Agfilms are used as solid electrical contacts in replacement of electrolyticones.
机译:我们研究了通过倾斜倾斜的基板上的真空中的金属蒸发获得的具有渐变厚度的银膜的光学和电学性质,以评估其作为半透明电触点的用途。我们测量了它们在不同宽度下的椭偏系数,光透射率和电导率,并且我们采用了一种有效的递归方法来计算其宏观介电函数,它们的光学性质和它们的微观电场。非常薄的薄膜的拓扑结构对应于断开的岛,而非常宽的薄膜只是简单地连接。对于中间宽度,薄膜变成半连续的,多重连接的,并且它的微观电场在光学共振处产生热点,该热点出现在导电相的渗流阈值附近,产生大的欧姆损耗,从而使吸收率增加到对应的同质薄膜之上。优化膜的厚度以使其透射率最大化,使其高于导电相的渗透阈值,从而获得透射率T = 0.41和薄层电阻$ R _ {\ square} ^ {\ mathrm {max}} \约2.7 \ Omega $的膜。我们还分析了当Agfilms用作固体电触点代替电解质时,多孔硅电致发光器件的发射频率偏移。

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